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US 11,114,472 B2Granted
Thin film transistor panel, display device, and method of manufacturing the thin film transistor panel
AssigneeSamsung Display Co., Ltd.
InventorsByeong Beom Kim, Heon Sik Ha, Jin Ho Hwang
Life of this patent
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Abstract
A transistor panel may include a substrate, a transistor, a first inorganic buffer layer, and an inorganic fluorine-containing buffer layer. The transistor may overlap the substrate and may include a semiconductor layer. The first inorganic buffer layer may be disposed between the substrate and the semiconductor layer. The inorganic fluorine-containing buffer layer may be disposed between the first inorganic buffer layer and the semiconductor layer and may contain fluorine in a range of 0.5 at % to 2 at %.
Claims16
A transistor panel comprising:
- a substrate;
- a transistor overlapping the substrate and comprising a semiconductor layer;
- a first inorganic buffer layer disposed between the substrate and the semiconductor layer;
- an inorganic fluorine-containing buffer layer disposed between the first inorganic buffer layer and the semiconductor layer, directly contacting the semiconductor layer, and containing fluorine in a range of 0.5 at % to 2 at %;
- and
- a second inorganic buffer layer interposed between the first inorganic buffer layer and the inorganic fluorine-containing buffer layer,
- wherein at least one of the first inorganic buffer layer and the second inorganic buffer layer contains fluorine, and
- wherein each of a content of fluorine contained in the first inorganic buffer layer and a content of fluorine contained in the second inorganic buffer layer is less than a content of fluorine contained in the inorganic fluorine-containing buffer layer.
5 more elements
A transistor panel comprising:
- a substrate;
- a transistor overlapping the substrate and comprising a semiconductor layer;
- a first inorganic buffer layer disposed between the substrate and the semiconductor layer;
- and
- an inorganic fluorine-containing buffer layer disposed between the first inorganic buffer layer and the semiconductor layer, directly contacting the semiconductor layer, and containing fluorine in a range of 0.5 at % to 2 at %, wherein a concentration of the fluorine in the inorganic fluorine-containing buffer layer decreases from a center of the inorganic fluorine-containing buffer layer toward at least one of the substrate and the semiconductor layer in a thickness direction.
2 more elements
A display device comprising:
- a substrate;
- a silicon nitride film disposed on the substrate;
- a first silicon oxide film disposed on the silicon nitride film;
- a fluorine-containing inorganic film disposed on the first silicon oxide film, containing fluorine in a range of 0.5 at % to 2 at %, and including SiOF or SiNF;
- and
- a silicon film disposed directly on the fluorine-containing inorganic film, wherein the fluorine-containing inorganic film is disposed between the silicon film and the first silicon oxide film,
- wherein at least one of the silicon nitride film and the first silicon oxide film contains fluorine, and
- wherein each of a content of fluorine contained in the silicon nitride film and a content of fluorine contained in the first silicon oxide film is less than a content of fluorine contained in the fluorine-containing inorganic film.
5 more elements
A method of manufacturing a thin film transistor panel, the method comprising:
- forming a first inorganic buffer layer on a substrate;
- forming an inorganic fluorine-containing buffer layer on the first inorganic buffer layer, wherein the inorganic fluorine-containing buffer layer contains fluorine in a range of 0.5 at % to 2 at %;
- forming a semiconductor layer directly on the inorganic fluorine-containing buffer layer;
- and
- forming a second inorganic buffer layer after forming the first inorganic buffer layer and before forming the inorganic fluorine-containing buffer layer,
- wherein the inorganic fluorine-containing buffer layer is disposed between the second inorganic buffer layer and the semiconductor layer,
- wherein at least one of the first inorganic buffer layer and the second inorganic buffer layer contains fluorine, and
- wherein each of a content of fluorine contained in the first inorganic buffer layer and a content of fluorine contained in the second inorganic buffer layer is less than a content of fluorine contained in the inorganic fluorine-containing buffer layer.
5 more elements
Dependencies are inferred from the claim text.