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US 11,114,468 B2Granted
Thin film transistor array substrate
OwnerXin Zhang, Lisheng Li +1inventors
InventorsXin Zhang, Lisheng Li, Peng He
Life of this patent
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Abstract
A thin film transistor (TFT) array substrate is provided. The TFT array substrate includes a display device plate and a semiconductor layer disposed on the display device plate. A thickness of the semiconductor layer is less than or equal to 35 nm.
Claims16
A thin film transistor (TFT) array substrate, comprising:
- a display device plate;
- and
- a semiconductor layer disposed on the display device plate, wherein a thickness of the semiconductor layer is less than or equal to 35 nm, and the semiconductor layer is generally “n” shaped;
- wherein the semiconductor layer comprises an active island and semiconductor lines connected to the active island and perpendicularly disposed to the active island, a width of the active island is less than or equal to 1.8 μm;
- and
- wherein the semiconductor lines comprise ion lightly doped areas and channel connecting areas, and a width of the ion lightly doped area is less than the width of the active island.
3 more elements
A TFT array substrate, comprising:
- a display device plate;
- and
- a semiconductor layer disposed on the display device plate, wherein a thickness of the semiconductor layer is less than or equal to 35 nm;
- wherein the semiconductor layer comprises an active island and semiconductor lines connected to the active island and perpendicularly disposed to the active island, a width of the active island is less than or equal to 1.8 μm;
- and
- wherein the semiconductor lines comprise ion lightly doped areas and channel connecting areas, and a width of the ion lightly doped area is less than the width of the active island.
3 more elements
Dependencies are inferred from the claim text.