IC products formed on a substrate having localized regions of high resistivity and methods of making such IC products

An integrated circuit (IC) product, comprising:

• a semiconductor-on-insulator (SOI) substrate comprising a base semiconductor layer, a buried insulation layer positioned on the base semiconductor layer and an active semiconductor layer positioned on the buried insulation layer;
• a first region of localized high resistivity formed in the base semiconductor layer, the first region of localized high resistivity having an electrical resistivity that is greater than an electrical resistivity of a material of the base semiconductor layer, wherein the first region of localized high resistivity comprises an insulating material positioned within an opening in the base semiconductor layer;
• and
• a first region comprising integrated circuits formed above the active semiconductor layer, wherein the first region comprising integrated circuits is positioned vertically above the first region of localized high resistivity in the base semiconductor layer and wherein, in a first plane substantially parallel to an upper surface of the active semiconductor layer, the first region of localized high resistivity has a first area and, in a second plane that is substantially parallel to the upper surface of the active semiconductor layer, the first region comprising integrated circuits has a second area, wherein the first area is substantially equal to or greater than the second area.

An integrated circuit (IC) product, comprising:

• a semiconductor-on-insulator (SOI) substrate comprising a base semiconductor layer, a buried insulation layer positioned on the base semiconductor layer and an active semiconductor layer positioned on the buried insulation layer, the base semiconductor layer comprising a material having a layer having a crystalline lattice structure and an electrical resistivity;
• a first region of localized high resistivity formed in the base semiconductor layer, the first region of localized high resistivity having an electrical resistivity that is greater than the electrical resistivity of the material of the base semiconductor layer, wherein the first region of localized high resistivity comprises a damaged region of the base semiconductor layer adjacent an interface between the base semiconductor layer, the damaged region having a damaged lattice structure that is different than the crystalline lattice structure;
• and
• a first region comprising integrated circuits formed above the active semiconductor layer, wherein the first region comprising integrated circuits is positioned vertically above the first region of localized high resistivity in the base semiconductor layer and wherein, in a first plane substantially parallel to an upper surface of the active semiconductor layer, the first region of localized high resistivity has a first area and, in a second plane that is substantially parallel to the upper surface of the active semiconductor layer, the first region comprising integrated circuits has a second area, wherein the first area is substantially equal to or greater than the second area.