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US 11,114,448 B2Granted
Semiconductor device and method for fabricating the same
AssigneeNanya Technology Corporation
InventorCheng-Ling Yang
Life of this patent
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate having a first region and a second region, a first semiconductor element positioned in the first region of the substrate, a second semiconductor element positioned in the first region of the substrate, a bridge conductive unit electrically connected the first semiconductor element and the second semiconductor element, and a programmable unit positioned in the second region and electrically connected to the bridge conductive unit.
Claims8
A semiconductor device;
- comprising:
- a substrate comprising a first region and a second region;
- a first semiconductor element positioned in the first region of the substrate;
- a second semiconductor element positioned in the first region of the substrate;
- a bridge conductive unit electrically connected to the first semiconductor element and the second semiconductor element;
- and
- a programmable unit positioned in the second region and electrically connected to the bridge conductive unit;
- wherein the programmable unit comprises a first programmable conductive layer, a programmable insulating layer, and a second programmable conductive layer, the first programmable conductive layer is electrically connected to the bridge conductive unit, the programmable insulating layer is positioned above the first programmable conductive layer, and the second programmable conductive layer is positioned above the programmable insulating layer,
- wherein the bridge conductive unit is interposed between the first and second semiconductor elements.
6 more elements
Dependencies are inferred from the claim text.