Stacking structure, package structure and method of fabricating the same

A stacking structure, comprising:

• a first stacked die unit, the first stacked die unit comprises:
• a first base semiconductor die having bonding pads;
• a first controller chip having bonding structures, wherein the first controller chip is stacked on the first base semiconductor die in a way that a first portion of the bonding pads of the first base semiconductor die faces the bonding structures of the first controller chip so that they are physically bonded with one another, while a second portion of the bonding pads of the first base semiconductor die are exposed;
• a second stacked die unit stacked on the first stacked die unit, wherein the second stacked die unit comprises:
• a second base semiconductor die having bonding pads;
• a second controller chip having bonding structures, wherein the second controller chip is stacked on the second base semiconductor die in a way that a first portion of the bonding pads of the second base semiconductor die faces the bonding structures of the second controller chip so that they are physically bonded with one another, while a second portion of the bonding pads of the second base semiconductor die are exposed, and
• wherein the second base semiconductor die of the second stacked die unit is attached to the first controller chip of the first stacked die unit, and being spaced apart from the first base semiconductor die by a first distance;
• and
• a bonding wire directly connecting the second portion of the bonding pads of the first base semiconductor die to the second portion of the bonding pads of the second base semiconductor die.

A method of fabricating a package structure, comprising:

• forming a plurality of stacked die units by the following steps:
• providing a semiconductor wafer having a plurality of first semiconductor dies, wherein each of the plurality of first semiconductor dies has a plurality of first bonding pads;
• stacking a plurality of first bonding chips on the semiconductor wafer, wherein each of the plurality of first bonding chips has a plurality of first bonding structures, wherein the plurality of first bonding structures is bonded to the plurality of first bonding pads in a way that two or more of the plurality of first bonding pads are joined with one of the plurality of first bonding structures through hybrid bonding;
• dicing the semiconductor wafer to form the plurality of stacked dies units each comprising one of the first bonding chip stacked over one of the first semiconductor die in a build-up direction;
• stacking the plurality of stacked dies units on top of one another in the build-up direction;
• and
• forming an insulating encapsulant encapsulating the plurality of stacked die units.