Semiconductor structure with ultra thick metal and manufacturing method thereof

A semiconductor structure, comprising:

• a logic substrate, comprising:
• a semiconductor device;
• and
• an interconnection structure over the semiconductor device, the interconnection structure having a metal layer surrounded by a dielectric layer;
• an inductor over the metal layer, comprising:
• a lower metal having a top surface;
• a photo-sensitive polymer layer surrounding the lower metal, the top surface of the lower metal being coplanar with a top surface of the photo-sensitive polymer layer, and the photo-sensitive polymer layer being different from the dielectric layer;
• and
• an upper metal electrically connecting to the lower metal through a via.

A semiconductor structure, comprising:

• a logic substrate, comprising:
• a semiconductor device;
• and
• an interconnection structure over the semiconductor device, the interconnection structure having a metal layer surrounded by a dielectric layer;
• an ultra thick metal (UTM) over the metal layer;
• a photo-sensitive polymer layer surrounding the UTM, and the photo-sensitive polymer layer being different from the dielectric layer;
• and
• a seed layer between a sidewall of the UTM and the photo-sensitive polymer layer.