US 11,114,334 B2 · Semiconductor device with air gap and method for preparing the same

Abstract

A semiconductor device includes a first bit line and a second bit line disposed over a semiconductor substrate, and a dielectric structure disposed over a sidewall of the first bit line. The first bit line is between the second bit line and the dielectric structure, and the first bit line is separated from the second bit line by an air gap. A method for preparing a semiconductor device includes forming a first dielectric structure and a second dielectric structure over a semiconductor substrate, and forming a conductive material over the first and the second dielectric structures. The conductive material extends into a first opening between the first and the second dielectric structures. The method also includes partially removing the conductive material to form a first bit line and a second bit line in the first opening.

Claims10

Dependent claims

A semiconductor device, comprising:

a first bit line disposed over a semiconductor substrate;
a dielectric structure disposed over a sidewall of the first bit line;
a second bit line disposed over the semiconductor substrate, wherein the first bit line is between the second bit line and the dielectric structure, and the first bit line is separated from the second bit line by an air gap;
and
a sealing dielectric layer disposed over the first bit line, the second bit line, the dielectric structure and the air gap;
wherein a top portion of the first bit line has a rounded corner, and a portion of the air gap extends between the sealing dielectric layer and the rounded corner of the first bit line.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device with air gap and method for preparing the same

Life of this patent

Semiconductor device with air gap and method for preparing the same

Life of this patent

Abstract

Claims10