Processing system and method of forming a contact

A processing system comprising:

• a plurality of process chambers comprising:
• a first process chamber configured to remove contaminant from an exposed surface of a source/drain region of a substrate, wherein the source/drain region is exposed through a trench formed in a dielectric material formed over the source/drain region;
• a second process chamber configured to deposit sequentially a doped semiconductor layer and a metal silicide layer over the source/drain region, wherein the source/drain region has a first dopant concentration and the doped semiconductor layer has a second dopant concentration higher than the first dopant concentration;
• a third process chamber configured to deposit a barrier layer on the metal silicide layer and sidewalls of the trench;
• a fourth process chamber configured to deposit an anchor layer over the barrier layer;
• a fifth process chamber configured to fill the trench with a conductor;
• a sixth process chamber configured to deposit an overburden layer over the conductor;
• and
• a seventh process chamber configured to heat the substrate to reflow the conductor within the trench.

A method of forming a contact, comprising:

• depositing a doped semiconductor layer over an exposed surface of a source/drain region of a substrate, wherein the source/drain region is exposed through a trench formed in a dielectric material formed over the source/drain region;
• depositing a metal silicide layer over the doped semiconductor layer in a first process chamber;
• transferring the substrate to a second chamber to form an anchor layer over the metal silicide layer and sidewalls of the trench;
• transferring the substrate to a third chamber to fill the trench with a conductor;
• and
• transferring the substrate to a second chamber to heat the substrate such that the conductor reflows within the trench;
• wherein the source/drain region has a first dopant concentration, and the doped semiconductor layer has a second dopant concentration higher than the first dopant concentration.