Etching method and semiconductor manufacturing method
AssigneeShowa Denko K.K.
InventorYosuke Tanimoto
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Abstract
An etching method which includes treating a workpiece having a stacked film (5) of a silicon oxide layer (2) and a silicon nitride layer (3) with an etching gas containing an unsaturated halon represented by the chemical formula: C2HxF(3−x)Br (in the chemical formula, x stands for 0, 1, or 2) so as to control the respective etch rates of the silicon nitride layer and the silicon oxide layer to the same level and form a high-aspect-ratio hole having a desirable profile at a high etch rate. Also disclosed is a method of manufacturing a semiconductor which includes by carrying out the etching method.
Claims11
An etching method, comprising treating a workpiece having a stacked film of a silicon oxide layer and a silicon nitride layer with an etching gas containing an unsaturated halon represented by the following chemical formula:
- C2HxF(3−x)Br (in the chemical formula, x stands for 0, 1, or 2) to etch both the silicon oxide layer and the silicon nitride layer.
Dependencies are inferred from the claim text.