Semiconductor device and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsMing-Hwei Hong, Juei-Nai Kwo, Yen-Hsun Lin, Keng-Yung Lin, Bo-Yu Yang, Hsien-Wen Wan
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Abstract
A semiconductor device includes a semiconductor substrate, a gate structure, and source/drain regions. The gate structure comprises an yttrium oxide layer over the semiconductor substrate, an aluminum oxide layer over the yttrium oxide layer, and a gate electrode on the aluminum oxide layer. The source/drain regions are on the semiconductor substrate and on opposite sides of the gate structure.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate structure comprising:
- an yttrium oxide layer over the semiconductor substrate;
- an aluminum oxide layer over the yttrium oxide layer;
- a first high-k dielectric layer over the aluminum oxide layer, wherein the first high-k dielectric layer is made of a material different than the aluminum oxide layer and the yttrium oxide layer;
- and
- a gate electrode on the first high-k dielectric layer;
- and
- source/drain regions on the semiconductor substrate and on opposite sides of the gate structure.
A semiconductor device, comprising:
- a substrate;
- a semiconductor fin extending upwardly from the substrate;
- a first high-k dielectric layer extending across the semiconductor fin;
- a second high-k dielectric layer over the first high-k dielectric layer and having a material different from the first high-k dielectric layer;
- a third high-k dielectric layer over the second high-k dielectric layer and having a material different from the second high-k dielectric layer, wherein the material of the third high-k dielectric layer is the same as the first high-k dielectric layer;
- a gate electrode on the third high-k dielectric layer;
- and
- source/drain regions on the semiconductor fin and on opposite sides of the gate electrode.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first high-k dielectric layer over a semiconductor substrate;
- forming a second high-k dielectric layer over the first high-k dielectric layer and having a material different from the first high-k dielectric layer;
- implanting the semiconductor substrate with a dopant through the first and second high-k dielectric layers to form source/drain regions;
- after implanting the semiconductor substrate, patterning the first and second high-k dielectric layers to expose the source/drain regions;
- and
- forming a gate electrode over the second high-k dielectric layer and laterally between the source/drain regions, wherein patterning the first and second high-k dielectric layers is performed such that a first remainder of the first and second high-k dielectric layers is below the gate electrode and extends past a first side of one of the source/drain regions and a second remainder of the first and second high-k dielectric layers extends past a second side of the one of the source/drain regions opposite the first side of the one of the source/drain regions, and the second remainder of the first and second high-k dielectric layers non-overlaps with the gate electrode.
Dependencies are inferred from the claim text.