Laser annealing apparatus, inspection method of substrate with crystallized film, and manufacturing method of semiconductor device

A manufacturing method of a semiconductor device, the method comprising the steps of:

• (a) forming an amorphous film over a substrate;
• (b) irradiating the amorphous film with a laser beam to crystallize the amorphous film and to form a crystallized film;
• (c) irradiating the crystallized film with a probe beam;
• (d) detecting, by a photodetector, the probe beam transmitted through the crystallized film;
• (e) changing an irradiation position of the probe beam onto the crystallized film to acquire a plurality of detection values of a detection signal output from the photodetector;
• (f) determining, based on a standard deviation of the plurality of detection values, a crystalline state of the crystallized film;
• and
• (g) re-irradiating the crystallized film with the laser beam according to a determination result of the crystalline state,
• wherein the laser beam passes through a projection lens and forms a linear irradiation region on the amorphous film by the projection lens, and
• the photodetector detects the probe beam having passes through the projection lens.