Impedance matching with multi-level power setpoint

A matching network comprising:

• an RF input operably coupled to an RF source, the RF source configured to provide at least two non-zero pulse levels;
• an RF output operably coupled to a load;
• at least one electronically variable capacitor (EVC) configured to alter its capacitance to provide a match configuration;
• and
• a control circuit configured to:
• for each of the at least two pulse levels, at a regular time interval, regardless of whether the pulse level is detected, determine a parameter-related value that is based on a parameter related to the load;
• repeatedly detect which of the at least two non-zero pulse levels is being provided by the RF source;
• and
• upon detecting one of the at least two non-zero pulse levels, for the detected pulse level:
• measure the parameter related to the load to determine a measured parameter value;
• determine the parameter-related value based on the measured parameter value;
• and
• alter the at least one EVC to provide the match configuration, the match configuration based on the parameter-related value.

A semiconductor processing tool comprising:

• a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate;
• and
• an impedance matching circuit operably coupled to the plasma chamber, the matching circuit comprising:
• an RF input operably coupled to an RF source, the RF source configured to provide at least two non-zero pulse levels;
• an RF output operably coupled to the plasma chamber;
• at least one electronically variable capacitor (EVC) configured to alter its capacitance to provide a match configuration;
• and
• a control circuit configured to:
• for each of the at least two pulse levels, at a regular time interval, regardless of whether the pulse level is detected, determine a parameter-related value that is based on a parameter related to the plasma chamber;
• repeatedly detect which of the at least two non-zero pulse levels is being provided by the RF source;
• and
• upon detecting one of the at least two non-zero pulse levels, for the detected pulse level:
• measure the parameter related to the plasma chamber to determine a measured parameter value;
• determine the parameter-related value based on the measured parameter value;
• and
• alter the at least one EVC to provide the match configuration, the match configuration based on the parameter-related value.

A method of manufacturing a semiconductor, the method comprising:

• placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate;
• coupling an impedance matching circuit between an RF source and the plasma chamber, wherein:
• the RF source is configured to provide at least two non-zero pulse levels;
• and
• the matching network comprises at least one electronically variable capacitor (EVC) configured to alter its capacitance to provide a match configuration;
• and
• performing impedance matching by:
• for each of the at least two pulse levels, at a regular time interval, regardless of whether the pulse level is detected, determining a parameter-related value that is based on a parameter related to the load;
• repeatedly detecting which of the at least two non-zero pulse levels is being provided by the RF source;
• and
• upon detecting one of the at least two non-zero pulse levels, for the detected pulse level:
• measuring the parameter related to the load to determine a measured parameter value;
• determining the parameter-related value based on the measured parameter value;
• and
• altering the at least one EVC to provide the match configuration, the match configuration based on the parameter-related value.