Physical defect detection in an integrated memory assembly

A method of operating non-volatile storage, the method comprising:

• controlling, by one or more control circuits on a control semiconductor die, a program operation in a memory semiconductor die, wherein the memory semiconductor die comprises a memory structure having non-volatile memory cells, wherein controlling the program operation includes the one or more control circuits providing a program voltage to a selected word line in the memory structure;
• determining an actual ICC profile for the program operation as the program operation is being controlled by the control semiconductor die;
• determining that the program operation has successfully programmed data into memory cells connected to the selected word line;
• comparing, by the one or more control circuits on the control semiconductor die, the actual ICC profile to an expected ICC profile for the program operation;
• and
• checking integrity of the data that was successfully programmed into the memory cells connected to the selected word line in response to the actual ICC profile deviating from the expected ICC profile by more than a threshold amount.

A non-volatile memory system, comprising:

• an integrated memory assembly comprising a control semiconductor die bonded to a memory semiconductor die, wherein the memory semiconductor die comprises a memory structure comprising word lines and non-volatile memory cells connected to the word lines;
• and
• a memory controller in communication with the integrated memory assembly;
• wherein the control semiconductor die comprises:
• means for controlling a program operation to store data in memory cells connected to a selected word line in the memory structure on the memory semiconductor die;
• and
• means for identifying a suspected type of physical defect in a region of the memory structure to the memory controller based on which portion of the program operation has a measured peak current usage by the integrated memory assembly deviating from expected peak current usage by more than a threshold;
• wherein the memory controller is configured to check integrity of the data that was stored in the memory cells connected to the selected word line in response to the control die identifying the suspected type of physical defect.