Memory device and method of operating the same
AssigneeSK hynix Inc.
InventorsHee Joung Park, Kyeong Seung Kang, Won Chul Shin
Life of this patent
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Abstract
Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.
Claims5
A method of operating a memory device, comprising:
- a first sensing operation using a first read voltage, comprising:
- changing a voltage of a sense node of a page buffer of the memory device based on whether a threshold voltage of a memory cell of the memory device is greater than the first read voltage;
- floating the sense node;
- resetting a storage unit of the page buffer while the sense node floats;
- and
- controlling a value stored in the storage unit based on the voltage of the sense node;
- a bit line recovery operation of controlling a voltage of a bit line coupled to the memory cell based on the value stored in the storage unit;
- and
- a second sensing operation using a second read voltage greater than the first read voltage.
Dependencies are inferred from the claim text.