SRAM devices with reduced coupling capacitance

A memory device, comprising:

• a substrate;
• a pass gate transistor over the substrate, the pass gate transistor including a first terminal and a second terminal;
• a first signal line positioned in a first metallization level over the pass gate transistor, the first signal line being connected to the first terminal of the pass gate transistor;
• a metal island structure in the first metallization level, the metal island structure being laterally separated from the first signal line;
• a second signal line positioned in a second metallization level;
• a third metallization level vertically positioned between the first metallization level and the second metallization level;
• and
• a first metal jumper structure in the third metallization level, the first metal jumper structure being connected to both the second signal line and the metal island structure.

A method, comprising:

• forming a first metallization level over a wafer, the wafer including a first transistor of a memory cell over a substrate, the first transistor including a first terminal and a second terminal, the first metallization level including a first metal line structure and a metal island structure laterally separated from the first metal line structure, the first metal line structure being longitudinal oriented along a first lateral direction and being connected to the first terminal of the first transistor, the metal island structure being connected to the second terminal of the first transistor;
• forming a second metallization level over the first metallization level, the second metallization level including a first metal jumper structure, the first metal jumper structure being connected to the metal island structure and being positioned non-overlapping with the first metal line structure;
• and
• forming a third metallization level over the second metallization level, the third metallization level including a second metal line structure, the second metal line structure being longitudinal oriented along a second lateral direction that is different from the first lateral direction, the second metal line structure being connected to the first metal jumper structure.