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US 11,114,054 B2Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHajime Kimura, Atsushi Umezaki
Life of this patent
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Abstract
A driver circuit includes a circuit 200, a transistor 101_1, and a transistor 101_2. A signal is selectively input from the circuit 200 to a gate of the transistor 101_1 and the transistor 101_2, so that the transistor 101_1 and the transistor 101_2 are controlled to be on or off. The transistor 101_1 and the transistor 101_2 are turned on or off; thus, the wiring 112 and the wiring 111 become conducting or non-conducting.
Claims10
A semiconductor device comprising:
- a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor,
- wherein a gate of the first transistor is electrically connected to a gate of the second transistor, a gate of the third transistor, one of a source and a drain of the fourth transistor, one of a source and a drain of the fifth transistor, and one of a source and a drain of the sixth transistor,
- wherein one of a source and a drain of the first transistor is electrically connected to a wiring,
- wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
- wherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the fifth transistor and the other of the source and the drain of the sixth transistor,
- wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the fifth transistor,
- wherein the other of the source and the drain of the fourth transistor is electrically connected to a gate of the fourth transistor,
- wherein a channel formation region of at least one of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor comprises an oxide semiconductor, and
- wherein the oxide semiconductor comprises indium.
6 more elements
A semiconductor device comprising:
- a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, and a ninth transistor,
- wherein a gate of the first transistor is electrically connected to a gate of the second transistor, a gate of the third transistor, one of a source and a drain of the fourth transistor, one of a source and a drain of the fifth transistor, and one of a source and a drain of the sixth transistor,
- wherein one of a source and a drain of the first transistor is electrically connected to a wiring,
- wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
- wherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the fifth transistor and the other of the source and the drain of the sixth transistor,
- wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the fifth transistor,
- wherein the other of the source and the drain of the fourth transistor is electrically connected to a gate of the fourth transistor,
- wherein a gate of the seventh transistor is electrically connected to a gate of the eighth transistor and a gate of the ninth transistor,
- wherein one of a source and a drain of the seventh transistor is electrically connected to the wiring, and
- wherein the other of the source and the drain of the seventh transistor is electrically connected to one of a source and a drain of the eighth transistor.
7 more elements
Dependencies are inferred from the claim text.