Detection device

A detection device comprising:

• a substrate;
• a drive electrode provided on the substrate;
• a detection electrode provided on the substrate and capacitively coupling with the drive electrode;
• a first thin film transistor and a second thin film transistor, electrically connected to the drive electrode,
• a first insulating film and a second insulating film both stacked on the substrate,
• wherein
• the first thin film transistor having a withstand voltage higher than a withstand voltage of the second thin film transistor,
• the first thin film transistor comprises a first gate electrode and a first semiconductor layer,
• the second thin film transistor comprises a second gate electrode and a second semiconductor layer, and
• the first semiconductor layer and the second semiconductor layer are in a same layer and are located between the first insulating film and the second insulating film,
• the first gate electrode opposes the first semiconductor layer via the first insulating film, and
• the second gate electrode opposes the second semiconductor layer via the second insulating film, and
• a distance from the first gate electrode to the first semiconductor layer is greater than a distance from the second gate electrode to the second semiconductor layer.