Real time block failure analysis for a memory sub-system

A method for storing state information of a memory region of a system, the method comprising:

• sensing, in response to detection of an error associated with a subset of a plurality of memory cells of the system, a state associated with each memory cell of the subset of the plurality of memory cells;
• and
• storing state distribution information in a persistent memory, the state distribution information comprising the sensed state associated with each memory cell of the subset,
• wherein sensing the state associated with each memory cell comprises stepping a corresponding word line with a plurality of sensing voltages to determine at which sensing voltage a corresponding bitline output changes, and
• wherein storing the state distribution information comprises storing the sensed state associated with each memory cell of the subset in a corresponding disjoint category of a histogram, wherein the corresponding disjoint category of the histogram corresponds to the determined sensing voltage.

A non-transitory computer readable medium having instructions stored thereon that, upon execution by a computing device, cause the computing device to perform operations, wherein the instructions comprise:

• instructions to sense, in response to detection of an error associated with a subset of a plurality of memory cells of a system, a state associated with each memory cell of the subset of the plurality of memory cells;
• and
• instructions to store state distribution information in a persistent memory, the state distribution information comprising the sensed state associated with each memory cell of the subset,
• wherein the instructions to sense the state associated with each memory cell comprise instructions to step a corresponding word line with a plurality of sensing voltages to determine at which sensing voltage a corresponding bitline output changes, and
• wherein the instructions to store the state distribution information comprise instructions to store the sensed state associated with each memory cell of the subset in a corresponding disjoint category of a histogram, wherein the corresponding disjoint category of the histogram corresponds to the determined sensing voltage.