Power optimization for memory subsystems

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:

• initialize a drive strength value of a memory subsystem to a first level;
• execute an operation on the memory subsystem with the drive strength at the first level;
• determine that a bit error rate occurring in the memory subsystem as a result of executing the operation on the memory subsystem satisfies a threshold value;
• in response to determining that the bit error rate satisfies the threshold value, increase the drive strength value of the memory subsystem to a second level;
• re-execute the operation at the increased drive strength value of the memory subsystem;
• determine, based on re-executing the operation at the increased drive strength value, that an updated bit error rate satisfies the threshold value;
• and
• in response to determining that the updated bit error rate satisfies the threshold value, decrease the drive strength value of the memory subsystem to the first level.

A system comprising:

• a memory component;
• and
• a processing device, operatively coupled with the memory component, to:
• initialize a drive strength value of a memory subsystem to a first level;
• execute an operation on the memory subsystem with the drive strength at the first level;
• determine that a bit error rate occurring in the memory subsystem as a result of executing the operation satisfies a threshold value;
• and
• in response to determining that the bit error rate satisfies the threshold value, increase the drive strength value of the memory subsystem to a second level;
• re-executing the operation at the increased drive strength;
• determine an updated bit error rate based on re-executing the operation at the increased drive strength;
• determine that the updated bit error rate satisfies the threshold value;
• in response to determining that the updated bit error rate satisfies the threshold value, decrease the drive strength value of the memory subsystem to the first level.