Mask blank, transfer mask, and method for manufacturing semiconductor device

A transfer mask comprising:

• a transparent substrate;
• and
• a light shielding film including a transfer pattern on the transparent substrate;
• wherein the light shielding film is a single layer film formed of a material containing silicon and nitrogen;
• wherein the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more;
• wherein a surface reflectance of the light shielding film to the exposure light is 40% or less;
• wherein a back surface reflectance of the light shielding film to the exposure light is 40% or less;
• wherein a transmittance of the light shielding film to a light having a wavelength of 900 nm is 50% or less;
• wherein an extinction coefficient k of the light shielding film to a light having a wavelength of 900 nm is 0.04 or more;
• and
• wherein a thickness of the light shielding film is 60 nm or less.