Integrated photodetector with direct binning pixel
AssigneeQuantum-Si Incorporated
InventorsJonathan M. Rothberg, Keith G. Fife, David M. Boisvert
Life of this patent
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Abstract
An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.
Claims20
An integrated circuit, comprising:
- a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons;
- at least one charge carrier storage region;
- and
- a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly from the photodetection region into the at least one charge carrier storage region based upon times at which the plurality of charge carriers are produced.
A photodetection method, comprising:
- (A) receiving incident photons at a photodetection region;
- and
- (B) selectively directing charge carriers of a plurality of charge carriers produced in response to the incident photons directly from the photodetection region into at least one charge carrier storage region based upon times at which the charge carriers are produced.
Dependencies are inferred from the claim text.