Infrared source for airport runway light applications
AssigneeSurface Igniter LLC
InventorsEdward Carome, George C. Hanna
Life of this patent
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Abstract
An airport runway light for use as a runway approach light for a runway lighting system, the runway light having a light body with a base configured to support the runway light in a light socket of a runway lighting system, the base having an electrical connection to electrically connect the runway light to the runway lighting system, the light further including one or more output windows wherein the runway light has a high-efficiency infrared source and one or more infrared reflectors to direct the infrared source outwardly through the one or more output windows, the infrared source including a silicon nitride element wherein the infrared source produces virtually no detectable visible light and with much less power consumption.
Claims19
An airport runway light for use as a runway approach light and runway light for a runway lighting system, the runway light comprising a light body having a base configured to support the runway light in an associated light socket of an associated runway lighting system, the base including an electrical connection to electrically connect the runway light to the associated runway lighting system, the light further including one or more output windows wherein the runway light has a high-efficiency infrared source and one or more infrared reflectors to direct the infrared source outwardly through the one or more output windows, the infrared source having a silicon nitride element, the silicon nitride element having a volume of a silicon nitride material extending from a silicon nitride element base to a silicon nitride element distal extent, the silicon nitride element base and silicon nitride element distal extent defining an element length of the silicon nitride material that is transverse to the one or more output windows, the volume of silicon nitride material having an element thickness and an element width that are transverse to the element length, the element thickness and the element width being less than the element length, the silicon nitride element producing a hot spot of infrared radiation emanating from within the volume of silicon nitride material when electrified, the hot spot having a hot spot length along the element length that is less than the element length and between the element base and the element distal end, wherein the infrared source produces high amounts of infrared radiation emanating from the hot spot within the volume of silicon nitride material and produces virtually no detectable visible light and with much less energy consumption than an incandescent PAR style lamp.
Dependencies are inferred from the claim text.