Crystal growth method in a semiconductor device

Abstract

According to one embodiment, a crystal growth method includes forming a first member at at least a part of a bottom portion of a hole in a structure body. The hole includes the bottom portion and a side portion. The first member includes a first element. The first element is not adhered to at least a part of the side portion in the forming the first member. The crystal growth method includes growing a crystal member inside the hole by supplying a source material to the hole after the forming the first member. The source material includes a second element. The crystal member includes the second element.

Dependencies are inferred from the claim text.