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US 11,111,573 B2Granted
Component and semiconductor manufacturing device
AssigneeKYOCERA Corporation
InventorsTakashi Hino, Tetsuo Inoue, Shuichi Saito
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Abstract
A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.
Claims12
A component, comprising
- a film containing crystalline yttrium oxide,
- wherein
- in an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression:
- 0≤Im/Ic≤0.002,
- an average grain diameter of the crystalline yttrium oxide is 3.8 nm or less, and
- in an observation image obtained by observing a cross section in a thickness direction of the film by using a scanning electron microscope at 10000 magnification, a pore is not present or a maximum diameter of a pore is 10 nm or less.
3 more elements
Dependencies are inferred from the claim text.