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US 11,111,435 B2Granted
Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
AssigneeVersum Materials US, LLC
InventorsMatthias Stender, Agnes Derecskei, Bradley J. Brennan
Life of this patent
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Abstract
This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.
Claims7
A chemical mechanical planarization (CMP) composition comprising:
- at least one amidine compound, or hydrolyzed derivative thereof, selected from the group consisting of 2-phenyl-2-imidazoline and 1,8-Diazabicyclo[5.4.0]undec-7-ene;
- silica;
- hydrogen peroxide;
- ferric nitrate;
- glycine;
- malonic acid;
- and
- a solvent.
5 more elements
Dependencies are inferred from the claim text.