Chemical-mechanical polishing solution having high silicon nitride selectivity
AssigneeAnji Microelectronics Technology (Shanghai) Co., Ltd.
InventorsWenting Zhou, Jianfen Jing
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Abstract
A chemical-mechanical polishing slurry having high Silicon Nitride removal rate selectivity includes abrasive particles and a compound containing one or more carboxyl groups. The polishing slurry has high SiN removal rate, low TEOS removal rate, and high removal rate selectivity of SiN to TEOS. The polishing slurry can significantly reduce the defects on Oxide surface which has an excellent market application prospect.
Claims11
A chemical-mechanical polishing slurry consisting of silica particles, a compound containing one or more carboxyl groups, a pH adjustor, and water, wherein the compound containing one or more carboxyl groups is selected from the group consisting of a pyridine compound, a piperidine compound, a pyrrolidine compound, a pyrrole compound, and any derivative and/or combination thereof.
A chemical-mechanical polishing slurry consisting of silica particles, a compound containing one or more carboxyl groups, a pH adjustor, water, and a bactericide, wherein the compound containing one or more carboxyl groups is selected from the group consisting of a pyridine compound, a piperidine compound, a pyrrolidine compound, a pyrrole compound, and any derivative and/or combination thereof.
Dependencies are inferred from the claim text.