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US 11,081,643 B1Granted
Bevel metal removal using ion beam etch
AssigneeInternational Business Machines Corporation
InventorsAshim Dutta, Saba Zare, Michael Rizzolo, Theodorus E. Standaert, Daniel C. Edelstein
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Abstract
Form a metallized layer at a top surface of a semiconductor wafer. The metallized layer includes a bottom contact and a dielectric barrier surrounding the bottom contact. Deposit a memory stack layer onto the metallized layer. The memory stack layer forms a first overspill on a bevel of the wafer. Remove the first overspill from the bevel using a first high-angle ion beam during a cleanup etch.
Claims20
A method comprising:
- forming a metallized layer at a top surface of a semiconductor wafer, wherein the metallized layer comprises a bottom contact and a dielectric barrier surrounding the bottom contact;
- depositing a memory stack layer onto the metallized layer, wherein the memory stack layer forms a first overspill on a bevel of the wafer;
- and
- removing the first overspill from the bevel using a first high-angle ion beam during a cleanup etch.
1 more element
A method comprising:
- forming a metallized layer at a top surface of a semiconductor wafer;
- depositing a memory stack layer onto the metallized layer, wherein the memory stack layer forms a first overspill on a bevel of the wafer;
- depositing a metal hardmask onto the memory stack layer, wherein the hardmask forms a second overspill on the bevel;
- and
- removing the first overspill and the second overspill from the bevel using a very-high-angle ion beam during trimming of the hardmask.
2 more elements
A method comprising:
- forming a metallized layer at a top surface of a semiconductor wafer;
- depositing a memory stack layer onto the metallized layer, wherein the memory stack layer forms a first overspill on a bevel of the wafer;
- depositing a metal hardmask onto the memory stack layer, wherein the hardmask forms a second overspill on the bevel;
- and
- removing the second overspill from the bevel using a first high-angle ion beam during trimming of the hardmask.
2 more elements
Dependencies are inferred from the claim text.