Method and apparatus for repairing defects of a photolithographic mask for the EUV range
AssigneeCarl Zeiss SMT GmbH
InventorsHendrik Steigerwald, Renzo Capelli
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Abstract
The invention relates to a method and an apparatus for repairing at least one defect of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range, wherein the method includes the steps of: (a) determining the at least one defect; and (b) ascertaining a repair shape for the at least one defect; (c) wherein the repair shape is diffraction-based in order to take account of a phase disturbance by the at least one defect.
Claims30
A computer-implemented method for repairing at least one defect of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range, the method including the steps of:
- a. determining, using a measurement instrument, the at least one defect;
- and
- b. ascertaining, using a computer, a repair shape for the at least one defect using measurement data determined for the at least one defect by the measurement instrument;
- c. wherein the repair shape comprises an imaging structure and wherein the repair shape is diffraction-based in order to take account of a phase disturbance by the at least one defect;
- and
- d. depositing a material that corresponds to the imaging structure on at least one part of the at least one defect, wherein the deposited material that corresponds to the imaging structure at least partially repairs the at least one defect or compensates the phase disturbance caused by the at least one defect.
An apparatus for repairing at least one defect of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range, having:
- a. means for determining the at least one defect;
- b. means for ascertaining a repair shape for the at least one defect using measurement data determined by the means for determining the at least one defect;
- c. wherein the repair shape comprises an imaging structure, and wherein the repair shape is diffraction-based in order to take account of a phase disturbance by the at least one defect;
- and
- d. means for depositing a material that corresponds to the imaging structure on at least one part of the at least one defect, the deposited material that corresponds to the imaging structure at least partially repairing the at least one defect or compensating the phase disturbance caused by the at least one defect.
Dependencies are inferred from the claim text.