Fabricating method of photomask, photomask structure thereof, and semiconductor manufacturing method using the same

A photomask structure, comprising:

• a chip region and a peripheral region adjacent to the chip region;
• a design pattern in the chip region;
• and
• a plurality of test patterns in the peripheral region, separated from the design pattern, wherein the plurality of test patterns includes:
• a reference pattern, having a first boundary;
• and
• a beta pattern, having a second boundary, wherein a roughness of the second boundary is greater than a roughness of the first boundary.

A method for fabricating a photomask, comprising:

• receiving a photomask substrate having a chip region and a peripheral region;
• forming a reference pattern by emitting one first radiation shot in the peripheral region;
• forming a first beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein the plurality of second radiation shots are emitted along a first direction, and the first radiation shot has a pixel size greater than a pixel size of each of the plurality of second radiation shots;
• comparing a roughness of a boundary of the first beta pattern along the first direction and a roughness of a boundary of the reference pattern along the first direction from a top view perspective;
• adjusting an alignment of the plurality of second radiation shots when a result of the comparison exceeds a tolerance;
• forming a design pattern in the chip region when the result of the comparison is within the tolerance, wherein a dimension of the first radiation shot is the same as a minimum dimension of a radiation shot for forming the design pattern.