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US 11,078,597 B2Granted
Method for making epitaxial structure
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsYang Wei, Shou-Shan Fan
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Abstract
A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A buffer layer is formed on the epitaxial growth surface. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are separated to form a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.
Claims19
A method for making epitaxial structure, the method comprising:
- placing a carbon nanotube layer on a first epitaxial growth surface of a substrate, wherein the carbon nanotube layer comprises a plurality of carbon nanotubes, the carbon nanotube layer defines a plurality of apertures, a portion of the first epitaxial growth surface is exposed from the plurality of apertures;
- epitaxially growing a buffer layer on the portion of the first epitaxial growth surface exposed from the plurality of apertures, wherein the buffer layer comprises a first surface in contact with the first epitaxial growth surface and a second surface opposite to the first surface;
- growing a first epitaxial layer on the second surface of the buffer layer, wherein a plurality of first grooves is formed in the first epitaxial layer, and the plurality of carbon nanotubes is embedded in the plurality of first grooves;
- exposing the first surface of the buffer layer by removing the substrate, wherein the buffer layer is kept on the first epitaxial layer after removing the substrate;
- and
- growing a second epitaxial layer on the first surface of the buffer layer, wherein the second epitaxial layer is grown from the first surface of the buffer layer, and the buffer layer is sandwiched between the second epitaxial layer and the first epitaxial layer after growing the second epitaxial layer.
3 more elements
A method for making epitaxial structure, the method comprising:
- placing a carbon nanotube layer on a first epitaxial growth surface of a substrate, wherein the carbon nanotube layer comprises a plurality of carbon nanotubes, the carbon nanotube layer defines a plurality of apertures, a portion of the first epitaxial growth surface is exposed from the plurality of apertures;
- epitaxially growing a buffer layer on the portion of the first epitaxial growth surface exposed from the plurality of apertures, wherein the buffer layer comprises a first surface in contact with the first epitaxial growth surface and a second surface opposite to the first surface;
- growing a first epitaxial layer on the second surface of the buffer layer, wherein a plurality of first grooves is formed in the first epitaxial layer, and the plurality of carbon nanotubes is embedded in the plurality of first grooves;
- exposing the first surface of the buffer layer by removing the substrate, wherein the buffer layer is kept on the first epitaxial layer after removing the substrate;
- and
- growing a second epitaxial layer on the first surface of the buffer layer, wherein the second epitaxial layer is grown from the first surface of the buffer layer, so that the carbon nanotube layer is sandwiched between the first epitaxial layer and the second epitaxial layer, and the buffer layer is sandwiched between the second epitaxial layer and the first epitaxial layer after growing the second epitaxial layer.
3 more elements
A method for making epitaxial structure, the method comprising:
- placing a carbon nanotube layer on a first epitaxial growth surface of a substrate, wherein the carbon nanotube layer defines a plurality of apertures, a portion of the first epitaxial growth surface is exposed from the plurality of apertures;
- growing a buffer layer on the first epitaxial growth surface exposed from the plurality of apertures;
- growing a first epitaxial layer on the buffer layer, so that the carbon nanotube layer is between the substrate and the first epitaxial layer;
- removing the substrate to expose the buffer layer;
- and
- growing a second epitaxial layer on the exposed buffer layer, so that the buffer layer is sandwiched between the second epitaxial layer and the first epitaxial layer after growing the second epitaxial layer.
3 more elements
Dependencies are inferred from the claim text.