Method of producing silicon single crystal ingot and silicon single crystal ingot

A method of producing a silicon single crystal ingot using a silicon crystal-pulling furnace having:

• a crucible storing a silicon melt doped with an n-type dopant made of Sb or As,
• a chamber accommodating the crucible,
• a pressure regulator portion controlling a pressure in the chamber,
• a pulling portion pulling up a silicon single crystal ingot from the silicon melt,
• a gas supply for supplying Ar gas into the chamber, and
• a guide portion provided above a surface of the silicon melt for guiding the Ar gas to flow along the surface of the silicon melt, the method comprising:
• pulling up the silicon single crystal ingot by the Czochralski process;
• and
• controlling an evaporation amount by keeping an amount of the n-type dopant being evaporated from the silicon melt per unit solidification ratio within a target evaporation amount range per unit solidification ratio by controlling one or more pulling condition values including at least one of a pressure in the chamber, a flow volume of the Ar gas, and a gap between the guide portion and the silicon melt while performing the pulling up the silicon single crystal ingot by the Czochralski process.