Trisilylamine derivatives as precursors for high growth rate silicon-containing films

A method to deposit a film comprising silicon and oxygen onto a substrate comprises steps of:

• a) providing a substrate in a reactor;
• b) introducing into the reactor at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the group consisting of Formulae A and B:
• wherein R1 is selected from a C3 to C10 cyclic alkyl group, a branched C4 to C10 cyclic alkyl group, a C3 to C10 cyclic alkenyl group, a branched C4 to C10 cyclic alkenyl group, a C3 to C6 cyclic alkynyl group, a branched C3 to C6 cyclic alkynyl group;
• R and R2-8 are each independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, a C1 to C6 alkylamino group, a C3 to C10 cyclic alkyl group, a branched C4 to C10 cyclic alkyl group, a C3 to C10 cyclic alkenyl group, a branched C4 to C10 cyclic alkenyl group, a C3 to C6 cyclic alkynyl group, a branched C3 to C6 cyclic alkynyl group, and a C4 to C10 aryl group wherein the silicon precursor is substantially free of halide;
• c) purging the reactor with purge gas;
• d) introducing an oxygen-containing source into the reactor;
• and
• e) purging the reactor with purge gas,
• wherein steps b through e are repeated until a desired thickness of film is deposited, and
• wherein the method is conducted at one or more temperatures ranging from about 25° C. to 600° C.