Integration scheme for microelectromechanical systems (MEMS) devices and complementary metal-oxide-semiconductor (CMOS) devices

A method for manufacturing an integrated circuit (IC), the method comprising:

• forming a plurality of first wires and a plurality of first vias stacked over a substrate and covered by a first dielectric layer;
• depositing a vertical etch stop layer covering the first dielectric layer;
• forming a plurality of second wires and a plurality of second vias stacked over the first wires and vias, wherein the second vias extend through the vertical etch stop layer respectively from the second wires respectively to the first wires;
• depositing a second dielectric layer covering the second wires and vias;
• forming a piezoelectric film covering the second dielectric layer while forming a microelectromechanical systems (MEMS) device in the piezoelectric film;
• and
• performing a first etch into a portion of the second dielectric layer underlying the MEMS device through an opening in the MEMS device to form a cavity underlying the MEMS device, wherein the first etch stops on the vertical etch stop layer.

A method for manufacturing an integrated circuit (IC), the method comprising:

• forming a plurality of wires and a plurality of first vias stacked over a substrate and covered by a first dielectric layer;
• forming a first lateral etch stop segment and a second lateral etch stop segment laterally separated from each other and extending through the first dielectric layer;
• depositing a first piezoelectric layer covering the first dielectric layer and the lateral etch stop segments;
• forming a second via extending through the first piezoelectric layer and the first dielectric layer to a respective one of the wires;
• depositing a second piezoelectric layer covering the second via and the first piezoelectric layer;
• and
• removing a portion of the first dielectric layer under the first piezoelectric layer after the depositing of the second piezoelectric layer, wherein the portion extends laterally beginning and ending respectively at the first and second lateral etch stop segments.