Self-processing synthesis of hybrid nanostructures

A process for forming a metal region at a metal-semiconductor junction of a nanostructure, the nanostructure consisting of a semiconductor material and at least one first metal with an oxide layer on the semiconductor material, wherein a surface of the semiconductor material is decorated with the at least one first metal, wherein the first metal is in direct contact with the surface of the semiconductor material, and wherein a portion of the semi-conductor material with the oxide layer thereon is at a region of the nanostructure at a vicinity of the junction, the process comprising:

• contacting the nanostructure in solution with a processing solution comprising:
• at least one metal source of a second metal,
• at least one reducing agent and
• at least one etchant,
• wherein said contacting of said nanostructure in solution with the processing solution comprises immersing the nanostructure in the processing solution, said contacting causing selective etching of an oxide layer present on the semiconductor surface of said nanostructure solely at the vicinity of the first metal to form an etched region,
• subsequent reduction of the at least one metal source of the second metal to at least one second metal and surface deposition of the at least one second metal at the etched region,
• wherein the selective etching and the surface deposition of the second metal are confined to the region at the vicinity of the junction by self-limiting reactions such that the process provides the nanostructure to have growth of the second metal confined to the region at the vicinity of the junction.

A process for patterning a nanostructure consisting of a first metal and a semiconductor material with an oxide layer on the semiconductor material, said patterning being at a metal-semiconductor junction of the first metal and the semiconductor material, wherein the first metal is in direct contact with a surface of the semiconductor material, and wherein a portion of the semi-conductor material with the oxide layer thereon is at a region of the nanostructure at a vicinity of the junction,

• the process consisting of:
• contacting said nanostructure in solution with a processing solution comprising:
• at least one etchant,
• at least one reducing agent and
• at least one metal source of a second metal,
• wherein said contacting of said nanostructure in solution with the processing solution is by immersing the nanostructure in the processing solution;
• said contacting of the nanostructure causing self-processing involving selective etching of the oxide layer at said region solely at a vicinity of the junction to form an oxide-free region and selective deposition of at least one second metal from said at least one metal source of the second metal selectively at said oxide-free region,
• wherein the selective etching and said surface deposition of the second metal are confined to the region at the vicinity of the junction by self-limiting reactions.