Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process

A method for manufacturing a microelectromechanical systems (MEMS) device, the method comprising:

• forming a cavity in a bulk semiconductor substrate;
• defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate into the cavity;
• arranging a cap structure on the main surface area of the bulk semiconductor substrate;
• forming a first capacitive structure comprising:
• arranging a first electrode structure on the movably suspended mass;
• and
• providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a first direction perpendicular to the main surface area of the bulk semiconductor substrate;
• and
• forming spring elements that are connected to and between the movably suspended mass and the bulk semiconductor substrate such that the movably suspended mass is suspended from the bulk semiconductor substrate within the cavity via the spring elements,
• wherein the spring elements comprise an electrical connection configured to electrically connect the first electrode structure to the bulk semiconductor substrate.

A method for manufacturing a microelectromechanical systems (MEMS) device, the method comprising:

• forming a cavity in a bulk semiconductor substrate;
• defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate into the cavity;
• arranging a cap structure on the main surface area of the bulk semiconductor substrate;
• and
• forming a first capacitive structure comprising:
• arranging a first electrode structure on the movably suspended mass;
• and
• providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a first direction perpendicular to the main surface area of the bulk semiconductor substrate,
• wherein:
• the main surface area extends in a second direction orthogonal to the first direction, and
• a projection of the first electrode structure and the second electrode structure are offset from each other in the second direction such that a first portion of the first electrode structure overlaps with a first portion of the second electrode structure in the first direction, a second portion of the first electrode structure does not overlap with the second electrode structure in the first direction, and a second portion of the second electrode structure does not overlap with the first electrode structure in the first direction perpendicular to the main surface area of the bulk semiconductor substrate partially overlaps with the first electrode structure.

A method for manufacturing a microelectromechanical systems (MEMS) device, the method comprising:

• forming a cavity in a bulk semiconductor substrate;
• defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate into the cavity;
• arranging a cap structure on the main surface area of the bulk semiconductor substrate;
• forming a first capacitive structure comprising:
• arranging a first electrode structure on the movably suspended mass;
• and
• providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a first direction perpendicular to the main surface area of the bulk semiconductor substrate;
• and
• forming a second capacitive structure comprising:
• providing the first electrode structure arranged on the movably suspended mass;
• and
• arranging a third electrode structure at the cap structure adjacent to the second electrode structure, wherein the first electrode structure and the third electrode structure are spaced apart in the first direction perpendicular to the main surface area of the bulk semiconductor substrate.

A method for manufacturing a system on chip using a CMOS process, wherein the system on chip comprises a microelectromechanical systems (MEMS) device and a control circuit to read out the MEMS device, the method comprising:

• forming the MEMS device comprising:
• forming a cavity in a bulk semiconductor substrate;
• defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate into the cavity;
• arranging a cap structure on the main surface area of the bulk semiconductor substrate;
• forming a first capacitive structure comprising:
• arranging a first electrode structure on the movably suspended mass;
• and
• providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a first direction perpendicular to the main surface area of the bulk semiconductor substrate;
• and
• forming spring elements that are connected to and between the movably suspended mass and the bulk semiconductor substrate such that the movably suspended mass is suspended from the bulk semiconductor substrate within the cavity via the spring elements, wherein the spring elements comprise an electrical connection configured to electrically connect the first electrode structure to the bulk semiconductor substrate;
• and
• forming the control circuit while forming the MEMS device.