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US 11,077,525 B2Granted
Method of processing a silicon carbide containing crystalline substrate, silicon carbide chip, and processing chamber
AssigneeInfineon Technologies AG
InventorsMichael Roesner, Markus Menath, Gudrun Stranzl
Life of this patent
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Abstract
A method of processing silicon carbide containing crystalline substrate is provided. The method includes pyrolyzing a surface of the silicon carbide containing crystalline substrate to produce a silicon and carbon containing debris layer over the silicon carbide containing crystalline substrate, and removing the silicon and carbon containing debris layer, wherein the pyrolyzing and the removing is repeated at least once.
Claims31
A method of processing silicon carbide containing crystalline substrate, the method comprising:
- pyrolyzing a surface of the silicon carbide containing crystalline substrate to produce a silicon and carbon containing debris layer over the silicon carbide containing crystalline substrate;
- and
- removing the silicon and carbon containing debris layer,
- wherein the pyrolyzing and the removing is repeated at least once.
1 more element
A processing chamber, comprising:
- an energy supply device configured to pyrolyze a surface of a silicon carbide containing crystalline substrate to produce a silicon and carbon containing debris layer over the silicon carbide containing crystalline substrate;
- and
- a removing device configured to remove the silicon and carbon containing debris layer,
- wherein the processing chamber is further configured to repeat the pyrolyzing and the removing at least once.
1 more element
A silicon carbide chip, comprising:
- a first main surface;
- a second main surface opposite the first main surface;
- and
- a side surface connecting the first main surface and the second main surface,
- wherein the side surface is essentially orthogonal to the first main surface and/or to the second main surface,
- wherein at least a portion of the side surface has an undulating shape in a direction from the first main surface to the second main surface.
3 more elements
Dependencies are inferred from the claim text.