Josephson magnetic memory with a semiconductor-based magnetic spin valve

A memory cell comprising:

• a first superconducting electrode;
• a second superconducting electrode;
• and
• a semiconductor-based magnetic spin valve coupled to the first superconducting electrode and the second superconducting electrode, wherein the semiconductor-based magnetic spin valve comprises:
• a semiconductor layer arranged between the first superconducting electrode and the second superconducting electrode,
• a first ferromagnetic insulator arranged on at least a first side of the semiconductor layer, wherein the first ferromagnetic insulator is configured to provide a fixed magnetization oriented in a first direction,
• a second ferromagnetic insulator arranged on at least a second side, opposite to the first side, of the semiconductor layer, wherein the second ferromagnetic insulator is configured to provide a free magnetization oriented in the first direction or a second direction, opposite to the first direction, in order to control a parameter associated with a flow of current from the first superconducting electrode to the second superconducting electrode through the semiconductor layer, and
• a control gate, arranged on top of the semiconductor layer, between the first ferromagnetic insulator and the second ferromagnetic insulator, configured to control a coupling between the first ferromagnetic insulator and the second ferromagnetic insulator.

A memory cell comprising:

• a first superconducting electrode;
• a second superconducting electrode;
• and
• a semiconductor-based magnetic spin valve coupled to the first superconducting electrode and the second superconducting electrode, wherein the semiconductor-based magnetic spin valve comprises:
• a semiconductor layer arranged between the first superconducting electrode and the second superconducting electrode,
• a first ferromagnetic insulator arranged on at least a first side of the semiconductor layer, wherein the first ferromagnetic insulator is configured to provide a fixed magnetization oriented in a first direction,
• a second ferromagnetic insulator arranged on at least a second side, opposite to the first side, of the semiconductor layer, wherein the second ferromagnetic insulator is configured to provide a free magnetization oriented in the first direction or a second direction, opposite to the first direction, in order to control a parameter associated with a flow of current from the first superconducting electrode to the second superconducting electrode through the semiconductor layer,
• a first control gate configured to control a coupling between the first ferromagnetic insulator and the second ferromagnetic insulator, and
• a second control gate configured to control a carrier density of the semiconductor layer.