Metal-insulator-metal capacitive structure and methods of fabricating thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiang-Ku Shen, Ming-Hong Kao, Hui-Chi Chen, Dian-Hau Chen, Yen-Ming Chen
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Abstract
A method of fabricating a metal-insulator-metal (MIM) capacitor structure includes forming a bottom electrode, forming a first oxide layer adjacent the bottom electrode, and depositing a first high-k dielectric layer over the bottom electrode and the first oxide layer. A middle electrode is then formed over the first high-k dielectric layer and a second oxide layer is formed adjacent the middle electrode. A second high-k dielectric layer may be deposited over the middle electrode and the second oxide layer and a top electrode over the second high-k dielectric layer.
Claims20
A method comprising:
- providing a top metal layer and an inter-metal dielectric (IMD);
- forming a first silicon oxide layer adjacent a bottom electrode, wherein the forming the first silicon oxide layer includes:
- forming an opening in a conductive material to provide the bottom electrode, wherein the forming the opening includes etching the conductive material and a portion of the IMD, and chemical vapor deposition of silicon oxide into the opening;
- depositing a first high-k dielectric layer over the bottom electrode and the first silicon oxide layer;
- forming a middle electrode over the first high-k dielectric layer;
- forming a second silicon oxide layer adjacent the middle electrode;
- depositing a second high-k dielectric layer over the middle electrode and the second silicon oxide layer;
- and
- forming a top electrode over the second high-k dielectric layer.
A method of fabricating a metal-insulator-metal (MIM) capacitor, the method comprising:
- forming a first conductive material layer over a substrate;
- patterning the first conductive material layer to form a first electrode and an opening;
- depositing an oxide material in the opening;
- performing a chemical mechanical polishing (CMP) process on the first electrode and deposited oxide material to form a planar surface, wherein after the CMP process the oxide material has a second thickness and the first electrode has a first thickness, the second thickness greater than the first thickness;
- depositing a high-k dielectric material having a different composition than the oxide material on the planar surface;
- and
- forming a second electrode over the high-k dielectric material.
A method of fabricating a metal-insulator-metal (MIM) capacitor structure, comprising:
- providing a first silicon oxide layer adjacent and coplanar a bottom electrode formed over a substrate, wherein a bottom surface of the first silicon oxide layer is closer to the substrate than a bottom surface of the bottom electrode;
- depositing a first high-k dielectric layer on the first silicon oxide layer and the bottom electrode;
- forming a middle electrode over the first high-k dielectric layer;
- forming a second oxide layer adjacent to and coplanar with the middle electrode;
- depositing a second high-k dielectric layer over the second oxide layer and the middle electrode;
- and
- forming a top electrode over the second high-k dielectric layer.
Dependencies are inferred from the claim text.