Back to results
US 11,056,431 B2Granted
Electric fuse structure and method for fabricating the same
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorYukihiro Nagai
Life of this patent
Estimating the term…
Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and first fuse branches and second fuse branches are formed in the substrate, in which the first fuse branches and the second fuse branches are separated by a shallow trench isolation (STI) and the second fuse branches include different sizes. Next, fuse elements are formed to connect the first fuse branches and the second fuse branches.
Claims7
A semiconductor device, comprising:
- fuse elements that can be disconnected by irradiating a laser beam;
- first fuse branches extending along a first direction and connected to one side of the fuse elements along a second direction orthogonal to the first direction, wherein the first fuse branches comprise different lengths along the first direction and different widths along the second direction and directly and physically contact each other laterally along the second direction and one end of the first fuse branches not connected to the fuse elements are aligned along the second direction;
- and
- second fuse branches extending along the first direction and directly connected to another side of the fuse elements, wherein the second fuse branches comprise different lengths along the first direction and different widths along the second direction, the fuse elements are wider than the second fuse branches under top view along the second direction, and the first direction is an extending direction of the first fuse branches, the second fuse branches, and the fuse elements, respectively.
1 more element
Dependencies are inferred from the claim text.