Compound feature generation in classification of error rate of data retrieved from memory cells

A memory sub-system, comprising:

• a processing device;
• and
• at least one memory device, the memory device having:
• a group of memory cells formed on an integrated circuit die;
• and
• a calibration circuit configured to measure a plurality of sets of signal and noise characteristics of the group of memory cells and determine a plurality of optimized read voltages of the group of memory cells from the plurality of sets of signal and noise characteristics respectively;
• wherein the memory sub-system is configured to:
• generate features from the plurality of sets of signal and noise characteristics, the features including at least one compound feature generated from the plurality of sets of signal and noise characteristics;
• generate, using the features, a classification of a bit error rate of data retrievable from the group of memory cells;
• and
• control an operation to read the group of memory cells based on the classification.

A memory device, comprising:

• a plurality of groups of memory cells formed on an integrated circuit die;
• and
• a calibration circuit configured to:
• measure a plurality of sets of signal and noise characteristics of a group of memory cells;
• determine a plurality of optimized read voltages of the group of memory cells from the plurality of sets of signal and noise characteristics respectively;
• generate features from the plurality of sets of signal and noise characteristics, the features including at least one compound feature generated from the plurality of sets of signal and noise characteristics;
• and
• generate, using the features, a classification of a bit error rate of data retrievable from the group of memory cells;
• wherein the memory device is configured to control an operation to read the group of memory cells based on the classification.