Memory system and method of operating memory system

A memory system, comprising:

• a memory device including a plurality of memory blocks, the memory device configured to perform on each of the plurality of memory blocks at least one of a program operation, a read operation, or an erase operation;
• and
• a controller in communication with the memory device and including:
• a stress check component configured to instruct the memory device to perform a stress check operation for a first memory block of the plurality of memory blocks, and generate a first command for a test read operation based on a result of the stress check operation;
• an error correction component configured to detect one or more error bits in a plurality of read data during the test read operation, and produce a count of the detected error bits;
• and
• a reclaim control component configured to generate a second command for a read reclaim operation based on the count of the detected error bits.

A method of operating a memory system, the method comprising:

• performing a program operation on a first memory block included in the memory system, wherein the memory system includes at least a second memory block coupled to a word line to which the first memory block is coupled;
• performing one or more operations on the second memory block, the one or more operations including a program operation, a read operation, or an erase operation;
• and
• performing a stress check operation on the first memory block to determine a stress value of the first memory block,
• wherein the performing of the stress check operation determines the stress value of the first memory block based on a number of program operations, a number of read operations, and a number of erase operations that have been performed on the second memory block.