Sense flags in a memory device

A memory device, comprising:

• a first array of memory cells;
• a second array of memory cells;
• and
• control circuitry for access of the first array of memory cells and the second array of memory cells, wherein the control circuitry is configured to cause the memory device to perform a method comprising:
• performing a sense operation on memory cells of the first array of memory cells coupled to first data lines of the first array of memory cells, and on memory cells of the second array of memory cells coupled to data lines of the second array of memory cells, without performing the sense operation on memory cells of the first array of memory cells coupled to second data lines of the first array of memory cells;
• and
• determining a program indication of the memory cells coupled to the second data lines of the first array of memory cells from the sense operation performed on the memory cells coupled to the data lines of the second array of memory cells.

A memory device, comprising:

• a first array of memory cells;
• a second array of memory cells;
• and
• control circuitry for access of the first array of memory cells and the second array of memory cells, wherein the control circuitry is configured to cause the memory device to perform a method comprising:
• programming memory cells coupled to first data lines in the first array of memory cells without programming memory cells coupled to second data lines in the first array of memory cells and without programming memory cells coupled to data lines in the second array of memory cells;
• and
• programming the memory cells coupled to the second data lines in the first array of memory cells while programming the memory cells coupled to the data lines in the second array of memory cells with flag data indicative of the memory cells coupled to the second data lines in the first array of memory cells being programmed.

A memory device, comprising:

• a first array of memory cells;
• a second array of memory cells;
• a third array of memory cells;
• and
• control circuitry for access of the first array of memory cells, the second array of memory cells and the third array of memory cells, Wherein the control circuitry is configured to cause the memory device to perform a method comprising:
• programming memory cells coupled to first data lines in the first array of memory cells comprising loading user data into a dynamic data cache of the memory device coupled to the first data lines prior to programming the memory cells coupled to the first data lines;
• programming memory cells coupled to second data lines in the first array of memory cells while programming memory cells coupled to data lines in the second array of memory cells with flag data indicative of the memory cells coupled to the second data lines in the first array of memory cells being programmed;
• and
• programming memory cells coupled to data lines in the third array of memory cells with other flag data while programming the memory cells coupled to the first data lines in the first array of memory cells.

A memory device, comprising:

• a first array of memory cells;
• a second array a memory cells;
• and
• control circuitry for access of the first array of memory cells and the second array of memory cells, wherein the control circuitry is configured to cause the memory device to perform a method comprising:
• programming memory cells coupled to first data lines in the first array of memory cells;
• and
• programming memory cells coupled to second data lines in the first array of memory cells while programming memory cells coupled to data lines in the second array of memory cells with flag data indicative of the memory cells coupled to the second data lines in the first array of memory cells being programmed;
• programming the memory cells coupled to the data lines in the second array of memory cells comprises programming data that includes both the flag data and other data associated with a particular page of data of the first array of memory cells.

A memory device, comprising:

• a first array of memory cells;
• a second array of memory cells;
• and
• control circuitry for access of the first array of memory cells and the second array of memory cells, wherein the control circuitry is configured to cause the memory device to perform a method comprising:
• programming memory cells coupled to first data lines in the first array of memory cells;
• and
• programming memory cells coupled to second data lines in the first array of memory cells while programming memory cells coupled to data lines in the second array of memory cells with flag data indicative of the memory cells coupled to the second data lines in the first array of memory cells being programmed;
• wherein the flag data comprises a plurality of bytes of data;
• and
• wherein the plurality of bytes of data comprises a bit indicative of the memory cells coupled to the second data lines in the first array of memory cells being programmed and bytes providing additional information about the memory cells coupled to the second data lines in the first array of memory cells.

A memo device, comprising:

• a first array of memory cells;
• a second array of memory cells;
• and
• control circuitry for access of the first array of memory cells and the second array of memory cells, wherein the control circuitry is configured to cause the memory device to perform a method comprising:
• programming memory cells coupled to first data lines in the first array of memory cells;
• and
• programming memory cells coupled to second data lines in the first array of memory cells while programming memory cells coupled to data lines in the second array of memory cells with flag data indicative of the memory cells coupled to the second data lines in the first array of memory cells being programmed;
• wherein a first data line of the first data lines in the first array of memory cells and a second data line of the second data lines in the first array of memory cells are adjacent first and second data lines;
• and
• the flag data indicative of the memory cell coupled to the second data line of the adjacent first and second data lines being programmed is to be read concurrently with the memory cell coupled to the first data line of the adjacent first and second data lines.