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US 11,029,602 B2Granted
Photoresist composition and method of forming photoresist pattern
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAn-Ren Zi, Chin-Hsiang Lin, Ching-Yu Chang, Yahru Cheng
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Abstract
A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the photoresist layer to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the protective layer is removed. The protective layer includes a polymer having fluorocarbon pendant groups.
Claims20
A method of forming a photoresist pattern, comprising:
- forming a protective layer over a photoresist layer formed on a substrate;
- selectively exposing the photoresist layer to actinic radiation;
- developing the photoresist layer to form a pattern in the photoresist layer;
- and
- removing the protective layer,
- wherein the protective layer comprises a polymer having fluorocarbon pendant groups, and
- wherein the forming the protective layer over the photoresist layer comprises:
- mixing material forming the protective layer and photoresist material to form a mixture;
- disposing the mixture over the substrate;
- and
- rotating the substrate with the mixture disposed thereon, wherein the protective layer separates from the mixture during the rotating and forms the protective layer over the photoresist layer.
8 more elements
A method of fabricating a semiconductor device, comprising:
- supplying a photoresist composition to a substrate surface to form a photoresist layer over the substrate;
- forming a protective layer over the photoresist layer;
- patternwise exposing the photoresist layer to extreme ultraviolet radiation to form a latent pattern in the photoresist layer;
- heating the photoresist layer after the patternwise exposing;
- developing the photoresist layer and removing the protective layer substantially simultaneously,
- wherein the photoresist layer comprises a metal oxide,
- wherein the protective layer comprises a polymer having fluorocarbon pendant groups, and
- wherein the supplying the photoresist composition to the substrate surface to form the photoresist layer over the substrate, comprises:
- mixing the polymer having fluorocarbon pendant groups with the photoresist composition to form a mixture;
- supplying the mixture to the substrate surface;
- and
- the protective layer is formed by spinning the substrate with the mixture disposed thereon, thereby causing the polymer having fluorocarbon pendant groups to separate from the mixture and form the protective layer over the photoresist layer.
9 more elements
A method of forming a photoresist pattern, comprising:
- forming a layer of a photoresist composition including a polymer having fluorocarbon pendant groups over a substrate,
- rotating the substrate with the layer of the photoresist composition disposed thereon to separate the layer of the photoresist composition into a photoresist layer and a layer of the polymer having fluorocarbon pendant groups disposed over the photoresist layer;
- patternwise exposing the photoresist layer to actinic radiation;
- and
- developing the photoresist layer to form a pattern in the photoresist layer.
2 more elements
Dependencies are inferred from the claim text.