Photonics structure with integrated laser

A method comprising:

• patterning a waveguide in a silicon layer of a silicon on insulator (SOI) wafer of a photonics structure having a dielectric stack defined by an insulator of the SOI wafer;
• forming in the photonics structure a trench extending through dielectric layers of the dielectric stack;
• and
• epitaxially growing a laser stack within the trench, the laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are disposed within the dielectric stack and include an active region configured to emit light in response to the application of electrical energy to the laser stack, wherein the forming in the photonics structure a trench extending through dielectric layers of the dielectric stack includes forming in the photonics structure a trench extending through dielectric layers of the dielectric stack so that the trench has a bottom elevation lower than a top elevation of a substrate of the SOI wafer.

A photonics structure comprising:

• a substrate;
• a dielectric stack disposed on the substrate;
• one or more photonics device integrated in the dielectric stack;
• and
• a laser light source having a laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are integrated in the dielectric stack, wherein the laser stack includes an active region configured to emit light in response to the application of electrical energy to the laser stack, wherein the dielectric stack is defined by an insulator layer of a silicon on insulator (SOI) wafer, and wherein a photonics device of the one or more photonics device is monocrystalline waveguide defined by a silicon layer of the SOI wafer, wherein the photonics structure includes a plurality of waveguides arranged in an overlapping stepwise pattern configured to evanescently couple light emitted from the active region into the monocrystalline waveguide defined by a silicon layer of the SOI wafer.

A photonics structure comprising:

• a substrate;
• a dielectric stack disposed on the substrate;
• one or more photonics device integrated in the dielectric stack;
• and
• a laser light source having a laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are integrated in the dielectric stack, wherein the laser stack includes an active region configured to emit light in response to the application of electrical energy to the laser stack, wherein the photonics structure includes a second laser light source having a second laser stack, wherein the laser stack and the second laser stack each include a bottom contact layer interfaced to a contact, wherein a bottom contact layer of second laser stack is at a higher elevation than a bottom contact layer of the laser stack.

A photonics structure comprising:

• a substrate;
• a dielectric stack disposed on the substrate;
• one or more photonics device integrated in the dielectric stack;
• and
• a laser light source having a laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are integrated in the dielectric stack, wherein the laser stack includes an active region configured to emit light in response to the application of electrical energy to the laser stack, wherein the dielectric stack is defined by an insulator layer of an SOI wafer, and wherein the laser stack extends entirely through elevations of the insulator layer.

A photonics structure comprising:

• a substrate;
• a dielectric stack disposed on the substrate;
• one or more photonics device integrated in the dielectric stack;
• and
• a laser light source having a laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are integrated in the dielectric stack, wherein the laser stack includes an active region configured to emit light in response to the application of electrical energy to the laser stack, wherein the dielectric stack is defined by an insulator layer of an SOI wafer, wherein a bottom elevation of the laser stack is defined by a bottom elevation of a buffer material formation, the buffer material formation having a bottom elevation within an elevation of the insulator layer.