Method of testing semiconductor device

A method of testing a semiconductor device by applying voltage to or passing current through the semiconductor device under predetermined conditions to measure a first physical quantity, the method comprising:

• in a first process, obtaining a first relational expression representing a relationship between a temperature of the semiconductor device and a second physical quantity different from the first physical quantity, the temperature of the semiconductor device being measured using temperature characteristics of a diode, the second physical quantity changing dependent on the temperature of the semiconductor device;
• in a second process, obtaining a second relational expression representing a relationship between the first physical quantity of the semiconductor device and an amount of change of the temperature of the semiconductor device, among a plurality of measurement points, each of which has a first variable value and a second variable value, the first variable value being a measured value of the first physical quantity that changes dependent on the temperature of the semiconductor device in a measurement period, the second variable value being measured by the diode as an amount of change of the temperature during a switching period within the measurement period of the first physical quantity, the switching period starting when the semiconductor device is turned ON and ending when the semiconductor device is turned OFF;
• in a third process, obtaining an amount of change of the second physical quantity during the switching period by measuring the second physical quantity simultaneously with the semiconductor device being turned OFF or immediately after the semiconductor device being turned OFF after the switching period;
• in a fourth process, obtaining, based on the first relational expression and the amount of change of the second physical quantity obtained in the third process, the amount of change of the temperature of the semiconductor device during the switching period;
• and
• in a fifth process, obtaining, based on the second relational expression, a corrected first physical quantity by correcting the first physical quantity according to the amount of change of the temperature of the semiconductor device obtained in the fourth process.