A method of detecting structures of nanometer size semiconductor elements on or below the surface of a sample using a probe that comprises a cantilever and a probe tip, wherein the cantilever is characterized by one or more normal modes of resonance including a fundamental resonance frequency, wherein the method comprises:
- applying, using a transducer, a vibrational input signal exclusively from a location of the transducer;
- and
- sensing, while the probe tip is in contact with the surface of the sample, an output signal indicative of motion of the probe tip due to vibrations at the surface induced by the vibrational input signal,
- wherein the vibrational input signal comprises a first signal component having a frequency within a range of 10 megahertz to 10 gigahertz, and
- wherein the vibrational input signal is amplitude modulated using a second signal component having a modulation frequency below 5 megahertz.