Apparatus for measuring wafer

An apparatus for measuring a wafer, comprising:

• a stage;
• a plate disposed on the stage;
• a horizontal frame comprising a first horizontal frame portion extending in a first direction, a second horizontal frame portion displaced from the first horizontal frame portion in a second direction orthogonal to the first direction and extending in the first direction, and a third horizontal frame portion connecting the first horizontal frame portion and the second horizontal frame portion, wherein the horizontal frame is configured to support a wafer;
• a vertical frame connecting the plate and the horizontal frame;
• a first adsorption portion connected with the first horizontal frame portion and configured to adsorb the wafer;
• a second adsorption portion connected with the second horizontal frame portion and configured to adsorb the wafer;
• a third adsorption portion connected with the third horizontal frame portion and configured to adsorb the wafer;
• a beam irradiator disposed between the plate and the horizontal frame and configured to irradiate a beam on the wafer;
• a detector on an opposite side of the horizontal frame from the beam irradiator and configured to receive the beam after the beam has penetrated through the wafer;
• and
• a calculator configured to measure the wafer by using the beam received by the detector.

An apparatus for measuring a wafer, comprising:

• a stage;
• a chuck disposed on the stage and comprising a plate connected with the stage, a horizontal frame configured to support a wafer, and a vertical frame connecting the plate and the horizontal frame;
• a beam irradiator disposed between the plate and the horizontal frame and configured to irradiate a beam on the wafer;
• a detector disposed above the horizontal frame and configured to receive the beam after it has penetrated through the wafer;
• and
• a calculator configured to:
• measure the wafer by using the beam received by the detector;
• obtain a first image of the wafer by using the beam received by the detector, the first image representing measurement characteristics of the wafer;
• create a second image of the wafer by performing image processing of the first image, and perform inpainting on the first image using the second image thereby creating a combined image.