Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device, comprising:

• (a) forming a seed layer containing a predetermined element on a substrate by performing a process multiple times, the process including performing:
• (a-1) supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and
• (a-2) supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor, thereby lowering concentration of the at least one of carbon or nitrogen from the adsorption layer;
• and
• (b) supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer,
• wherein (a-1) and (a-2) are alternately performed in (a), and
• wherein a pressure at a space where the substrate is located in (a-1) is set higher than a pressure at a space where the substrate is located in (a-2).