Polymer substrate with hardcoat layer, and manufacturing method for same

A polymer substrate with hard coating layer comprising a polymer substrate having a thickness of 1 mm to 20 mm and a hard coating layer on the surface thereof;

• wherein,
• the hard coating layer comprises:
• a cured underlayer laminated on the surface of the polymer substrate, containing 10 to 90 parts by weight of multifunctional acrylate and 90 to 10 parts by weight of inorganic oxide fine particles and/or a hydrolysis-condensation product of an organic silicon compound, and having a thickness of 1 μm to 20 μm, and
• a silicon oxide layer that makes direct contact with the cured underlayer on the opposite side from the polymer substrate, is formed by PE-CVD using an organic silicon compound selected from an organosiloxane, organosilane or (organo)silazane as raw material, and satisfies all of the following requirements (a) to (c):
• (a) film thickness of the silicon oxide layer is within the range of 3.5 to 9.0 μm,
• (b) maximum indentation depth of the surface of the silicon oxide layer, as determined by measuring nanoindentation under conditions of a maximum load of 1 mN, is 150 nm or less, and
• (c) the value of critical compression ratio K of the silicon oxide layer, as defined by formula (1) in a 3-point bending test of the polymer substrate with hard coating layer that imparts indentation displacement in which the surface laminated with the silicon oxide layer becomes concave, is 0.975 or less:
• K=(R−D/2)/R−(0.00215×d) Formula (1)
• (wherein,
• D represents the total thickness (mm) of the polymer substrate with hard coating layer,
• d represents the film thickness (μm) of the silicon oxide layer, and
• R represents the bend radius (mm) of the polymer substrate with hard coating layer, measured when the silicon oxide layer begins to separate from a cut line (separation starting line) drawn in advance at the location of the central fulcrum point where a weight is applied in a 3-point bending test),
• wherein the ratio of infrared absorbance of the silicon oxide layer at a wave number of 1280 cm−1 to that at a wave number of 1020 cm−1 (α1280/α1020) is within the range of 0.002 to 0.020, and
• the inorganic oxide fine particles and/or the hydrolysis-condensation product of the organic silicon compound of the cured underlayer is reacted with a (meth)acrylic resin having alkoxysilyl groups, hydroxyl groups, amino groups, or carboxyl groups in a side chain thereof.