Copper-ceramic bonded body and insulation circuit substrate
AssigneeMitsubishi Materials Corporation
InventorNobuyuki Terasaki
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Abstract
In a copper-ceramic bonded body of the present invention, at a bonding interface of a copper member and a ceramic member, there are formed a nitride compound layer containing one or more nitride forming elements selected from Ti, Nb, Hf, and Zr, and an Ag—Cu eutectic layer, in order from the ceramic member side, the thickness of the nitride compound layer is 0.15 μm or more and 1.0 μm or less, an intermetallic compound phase formed of an intermetallic compound that contains the nitride forming element and Si is present between the copper member and the ceramic member, and Cu and Si are present at the grain boundary of the nitride compound layer.
Claims6
A copper-ceramic bonded body comprising:
- a copper member formed of copper or a copper alloy;
- and
- a ceramic member formed of silicon nitride,
- wherein the copper member and the ceramic member are bonded to form the copper-ceramic bonded body,
- at a bonding interface of the copper member and the ceramic member, a nitride compound layer including one or more nitride forming elements selected from Ti, Nb, Hf, and Zr, and an Ag—Cu eutectic layer are formed in order from the ceramic member side,
- a thickness of the nitride compound layer is 0.47 μm or more and 0.89 μm or less,
- an intermetallic compound phase formed of an intermetallic compound that contains the nitride forming element and Si is present between the copper member and the ceramic member,
- Cu and Si are present at a grain boundary of the nitride compound layer, and
- wherein 90° peeling strength between the copper member and the ceramic member is 11.0 kN/m or more and 16.4 kN/m or less.
Dependencies are inferred from the claim text.